BSP322P Infineon

Symbol Micros: TBSP322p
Contractor Symbol:
Case : SOT223
P-MOSFET 100V 1A 800mΩ 1.8W
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: 1Ohm
Max. drain current: 1A
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSP322PH6327XTSA1 RoHS Case style: SOT223t/r Datasheet
In stock:
40 pcs.
Quantity of pcs. 2+ 15+ 100+ 300+ 1000+
Net price (EUR) 0,5133 0,2860 0,2250 0,2121 0,2053
Add to comparison tool
Packaging:
100
Manufacturer:: Infineon Manufacturer part number: BSP322PH6327XTSA1 Case style: SOT223  
External warehouse:
7000 pcs.
Quantity of pcs. 1000+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 0,2053
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSP322PH6327XTSA1 Case style: SOT223  
External warehouse:
1000 pcs.
Quantity of pcs. 1000+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 0,2053
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 1Ohm
Max. drain current: 1A
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD