BSR802NL INFINEON

Symbol Micros: TBSR802nl

104989

TBSR802nl

Contractor Symbol:

Case : SC-59

Datasheet

Technical drawing Add to favourites

N-MOSFET 20V 3.7A 23mΩ 500mW BSR802NL6327HTSA1

Parameters

Open channel resistance:	32mOhm
Max. drain current:	3,7A
Max. power loss:	500mW
Case:	SC-59
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSR802N L6327 RoHS Case style: SC-59 t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,4538	0,2513	0,1983	0,1871	0,1810

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BSR802NL6327HTSA1 Case style: SC-59  

External warehouse:

9000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1810

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	32mOhm
Max. drain current:	3,7A
Max. power loss:	500mW
Case:	SC-59
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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