BSS123 HXY MOSFET

Symbol Micros: TBSS123 HXY
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Case : SOT23
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Transistor N-Channel MOSFET; 100V; 20V; 9Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP;
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Parameters
Open channel resistance: 9Ohm
Max. drain current: 170mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: BSS123 RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 10+ 50+ 200+ 1000+ 3000+
Net price (EUR) 0,0841 0,0331 0,0193 0,0141 0,0129
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Packaging:
3000
Open channel resistance: 9Ohm
Max. drain current: 170mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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