BSS127H6327 Infineon

Symbol Micros: TBSS127
Contractor Symbol:
Case : SOT23
N-MOSFET 600V 21mA 500Ω 500mW BSS127H6327XTSA2
Parameters
Open channel resistance: 600Ohm
Max. drain current: 21mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS127H6327XTSA2 RoHS Case style: SOT23t/r Datasheet
In stock:
5935 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,3082 0,1705 0,1133 0,0946 0,0880
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSS127H6327XTSA2 Case style: SOT23  
External warehouse:
36000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0880
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSS127H6327XTSA2 Case style: SOT23  
External warehouse:
69000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0880
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 600Ohm
Max. drain current: 21mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD