BSS139H6327 Infineon

Symbol Micros: TBSS139
Contractor Symbol:
Case : SOT23
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N-MOSFET 250V 100mA 14Ω 360mW BSS139H6327XTSA1
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Parameters
Open channel resistance: 30Ohm
Max. drain current: 100mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 250V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS139H6327XTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,3832 0,2500 0,1792 0,1568 0,1470
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Packaging:
200
Open channel resistance: 30Ohm
Max. drain current: 100mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 250V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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