BSS225H6327 Infineon

Symbol Micros: TBSS225
Contractor Symbol:
Case : SOT89
N-MOSFET 600V 0.09A 45Ω 1W BSS225H6327FTSA1
Parameters
Open channel resistance: 45Ohm
Max. drain current: 90mA
Max. power loss: 1W
Case: SOT89
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS225H6327FTSA1 RoHS Case style: SOT89 t/r Datasheet
In stock:
997 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5512 0,3340 0,2569 0,2317 0,2205
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Packaging:
1000
Manufacturer:: Infineon Manufacturer part number: BSS225H6327FTSA1 Case style: SOT89  
External warehouse:
21000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2205
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSS225H6327FTSA1 Case style: SOT89  
External warehouse:
25000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2205
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 45Ohm
Max. drain current: 90mA
Max. power loss: 1W
Case: SOT89
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD