BSS306NH6327 Infineon
Symbol Micros:
TBSS306n
Case : SOT23
N-MOSFET 30V 2.3A 57mΩ 500mW BSS306NH6327HTSA1
Parameters
| Open channel resistance: | 93mOhm |
| Max. drain current: | 2,3A |
| Max. power loss: | 500mW |
| Case: | SOT23 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: BSS306NH6327XTSA1 RoHS
Case style: SOT23t/r
Datasheet
In stock:
2623 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,2514 | 0,1327 | 0,1030 | 0,0951 | 0,0910 |
Manufacturer:: Infineon
Manufacturer part number: BSS306NH6327XTSA1
Case style: SOT23
External warehouse:
2025000 pcs.
| Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0910 |
Manufacturer:: Infineon
Manufacturer part number: BSS306NH6327XTSA1
Case style: SOT23
External warehouse:
24000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0910 |
| Open channel resistance: | 93mOhm |
| Max. drain current: | 2,3A |
| Max. power loss: | 500mW |
| Case: | SOT23 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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