BSS314PEH6327 Infineon

Symbol Micros: TBSS314pe

110050

TBSS314pe

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 1.5A 140mΩ 500mW BSS314PEH6327XTSA1

Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS314PEH6327XTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

2335 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2118	0,1172	0,0778	0,0649	0,0605

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BSS314PEH6327XTSA1 Case style: SOT23  

External warehouse:

45000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0605

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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