BSS606NH6327 Infineon

Symbol Micros: TBSS606n
Contractor Symbol:
Case : SOT89
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N-MOSFET 60V 3.2A 60mΩ 1W BSS606NH6327XTSA1
Parameters
Open channel resistance: 90mOhm
Max. drain current: 3,2A
Max. power loss: 1W
Case: SOT89
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS606NH6327XTSA1 RoHS Case style: SOT89 t/r Datasheet
In stock:
990 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7726 0,4884 0,3851 0,3522 0,3358
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Packaging:
1000
Open channel resistance: 90mOhm
Max. drain current: 3,2A
Max. power loss: 1W
Case: SOT89
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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