BSS63LT1G

Symbol Micros: TBSS63
Contractor Symbol:
Case : SOT23
Transistor PNP; 30; 350mW; 100V; 200mA; 50MHz; -55°C ~ 150°C; Replacement: BSS63LT1G; BSS63;
Parameters
Power dissipation: 350mW
Current gain factor: 30
Cutoff frequency: 50MHz
Manufacturer: Fairchild
Case: SOT23
Max. collector current: 200mA
Max collector-emmiter voltage: 100V
Manufacturer:: ON-Semicoductor Manufacturer part number: BSS63LT1G RoHS Case style: SOT23t/r  
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1338 0,0614 0,0334 0,0250 0,0223
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Packaging:
3000
Manufacturer:: ON-Semicoductor Manufacturer part number: BSS63LT1G Case style: SOT23  
External warehouse:
252000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0223
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: BSS63LT1G Case style: SOT23  
External warehouse:
3500 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0300
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 350mW
Current gain factor: 30
Cutoff frequency: 50MHz
Manufacturer: Fairchild
Case: SOT23
Max. collector current: 200mA
Max collector-emmiter voltage: 100V
Operating temperature (range): -55°C ~ 150°C
Transistor type: PNP