BSS806NEH6327XTSA1
Symbol Micros:
TBSS806ne
Case : SOT23
Transistor N-Channel MOSFET; 20V; 8V; 82mOhm; 2,3A; 500mW; -55°C ~ 150°C; Replacement: BSS806NEH6327XTSA1; BSS806NEH6327;
Parameters
| Open channel resistance: | 82mOhm |
| Max. drain current: | 2,3A |
| Max. power loss: | 500mW |
| Case: | SOT23 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 20V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: BSS806NEH6327XTSA1 RoHS
Case style: SOT23t/r
Datasheet
In stock:
100 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,2590 | 0,1302 | 0,0777 | 0,0643 | 0,0578 |
Manufacturer:: Infineon
Manufacturer part number: BSS806NEH6327XTSA1
Case style: SOT23
External warehouse:
1808990 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0578 |
Manufacturer:: Infineon
Manufacturer part number: BSS806NEH6327XTSA1
Case style: SOT23
External warehouse:
63000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0578 |
| Open channel resistance: | 82mOhm |
| Max. drain current: | 2,3A |
| Max. power loss: | 500mW |
| Case: | SOT23 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 20V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 8V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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