BSS816NWH6327 Infineon

Symbol Micros: TBSS816nw
Contractor Symbol:
Case : SOT323
N-MOSFET 20V 1.4A 160mΩ 500mW BSS816NWH6327XTSA1
Parameters
Open channel resistance: 240mOhm
Max. drain current: 1,4A
Max. power loss: 500mW
Case: SOT323
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS816NWH6327XTSA1 RoHS Case style: SOT323 t/r Datasheet
In stock:
1150 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1735 0,0824 0,0462 0,0353 0,0315
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSS816NWH6327XTSA1 RoHS Case style: SOT323 Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1735 0,0824 0,0462 0,0353 0,0315
Add to comparison tool
Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSS816NWH6327XTSA1 Case style: SOT323  
External warehouse:
15000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0318
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 240mOhm
Max. drain current: 1,4A
Max. power loss: 500mW
Case: SOT323
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD