BSS83PH6327XTSA1

Symbol Micros: TBSS83p
Contractor Symbol:
Case : SOT23
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Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Equivalent: BSS83PH6327; BSS83PH6327XTSA1; BSS83P;
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Parameters
Open channel resistance: 3Ohm
Max. drain current: 330mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS83PH6327XTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
44547 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2827 0,1566 0,1040 0,0867 0,0808
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Packaging:
3000
Open channel resistance: 3Ohm
Max. drain current: 330mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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