BSZ086P03NS3 G

Symbol Micros: TBSZ086p03ns3

125481

TBSZ086p03ns3

Contractor Symbol:

Case : TSDSON08

Datasheet

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P-MOSFET 40A 30V 69W 0.086Ω

Parameters

Open channel resistance:	13,4mOhm
Max. drain current:	40A
Max. power loss:	69W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSZ086P03NS3GATMA1 Case style: TSDSON08  

External warehouse:

15000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2522

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Packaging:
5000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	13,4mOhm
Max. drain current:	40A
Max. power loss:	69W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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