BSZ086P03NS3E G

Symbol Micros: TBSZ086p03ns3e

108445

TBSZ086p03ns3e

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P-MOSFET 40A 30V 69W 0.086Ω ESD protected

Parameters

Case:	TSDSON08
Manufacturer:	Infineon Technologies
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Drain current:	40A
Drain-source voltage (Uds):	30V
Power:	69W

All parameters

Manufacturer:: Infineon Manufacturer part number: BSZ086P03NS3EGATMA1 Case style: TSDSON08  

External warehouse:

5000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1268

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Packaging:
5000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Case:	TSDSON08
Manufacturer:	Infineon Technologies
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Drain current:	40A
Drain-source voltage (Uds):	30V
Power:	69W
Drain resistance (Rds on):	0,086 Ohm
Mounting:	SMD
Polarisation:	Unipolar

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