BUZ11

Symbol Micros: TBUZ11

1772

TBUZ11

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 30A 50V 75W

Parameters

Open channel resistance:	40mOhm
Max. drain current:	30A
Max. power loss:	75W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	50V
Max. drain-gate voltage:	50V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: BUZ11-NR4941 RoHS Case style: TO220 Datasheet

In stock:

1558 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,0844	0,7958	0,6376	0,5468	0,5166

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: BUZ11-NR4941 Case style: TO220  

External warehouse:

10230 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5220

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Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	40mOhm
Max. drain current:	30A
Max. power loss:	75W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	50V
Max. drain-gate voltage:	50V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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