DGCP120F65M2 DONGHAI

Symbol Micros: TDGC100f65m

405441

TDGC100f65m

Contractor Symbol:

Case : TO247Plus

Datasheet

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Transistor IGBT ; 650V; 30V; 160A; 360A; 500W; 4,0V~6,5V; 300nC; -55°C~175°C;

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Parameters

Gate charge:	300nC
Max. dissipated power:	500W
Max. collector current:	160A
Max collector current (impulse):	360A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247Plus-3L
Manufacturer:	Donghai

All parameters

         

 

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• Parameters

Gate charge:	300nC
Max. dissipated power:	500W
Max. collector current:	160A
Max collector current (impulse):	360A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247Plus-3L
Manufacturer:	Donghai
Collector-emitter voltage:	650V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	30V
Mounting:	THT

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