DHG25T120 DONGHAI
Symbol Micros:
TDGC25f120m2
Case : TO247
Transistor IGBT ; 1200V; 20V; 50A; 75A; 278W; 4,5V~7,0V; 141nC; -55°C~150°C;
Parameters
Gate charge: | 141nC |
Max. dissipated power: | 278W |
Max. collector current: | 50A |
Max collector current (impulse): | 75A |
Forvard volatge [Vgeth]: | 4,5V ~ 7,0V |
Case: | TO247 |
Manufacturer: | Donghai |
Gate charge: | 141nC |
Max. dissipated power: | 278W |
Max. collector current: | 50A |
Max collector current (impulse): | 75A |
Forvard volatge [Vgeth]: | 4,5V ~ 7,0V |
Case: | TO247 |
Manufacturer: | Donghai |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -55°C ~ 150°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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