DGN30F65M2 DONGHAI

Symbol Micros: TDGC30f65m

405437

TDGC30f65m

Contractor Symbol:

Case : TO 3PN

Datasheet

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Transistor IGBT ; 650V; 30V; 60A; 180A; 230W; 5,0V~7,0V; 48nC; -45°C~175°C;

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Parameters

Gate charge:	48nC
Max. dissipated power:	230W
Max. collector current:	60A
Max collector current (impulse):	180A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO 3PN
Manufacturer:	Donghai

All parameters

Manufacturer:: WXDH Manufacturer part number: DGN30F65M2 RoHS Case style: TO 3PN Datasheet

In stock:

60 pcs.

Quantity of pcs.	1+	5+	30+	60+	300+
Net price (EUR)	1,5127	1,0570	0,8691	0,8362	0,7963

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Packaging:
30/60 Quantity (multiple: 1)

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• Parameters

Gate charge:	48nC
Max. dissipated power:	230W
Max. collector current:	60A
Max collector current (impulse):	180A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO 3PN
Manufacturer:	Donghai
Collector-emitter voltage:	650V
Operating temperature (range):	-45°C ~ 175°C
Gate-emitter voltage:	30V
Mounting:	THT

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