DGC40F120M2 DONGHAI
Symbol Micros:
TDGC40f120m2
Case : TO247
Transistor IGBT ; 1200V; 30V; 80A; 160A; 388W; 4,5V~6,5V; 198nC; -45°C~175°C;
Parameters
Gate charge: | 198nC |
Max. dissipated power: | 388W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 4,5V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Donghai |
Gate charge: | 198nC |
Max. dissipated power: | 388W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 4,5V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Donghai |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -45°C ~ 175°C |
Gate-emitter voltage: | 30V |
Mounting: | THT |
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