DGC75F65M DONGHAI

Symbol Micros: TDGC75f65m

405440

TDGC75f65m

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 30V; 150A; 300A; 440W; 4,5V~7,0V; 187nC; -45°C~175°C;

Parameters

Gate charge:	187nC
Max. dissipated power:	440W
Max. collector current:	150A
Max collector current (impulse):	300A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO247
Manufacturer:	Donghai

All parameters

Manufacturer:: WXDH Manufacturer part number: DGC75F65M RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	2,6496	2,2779	2,0573	1,9518	1,8919

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	187nC
Max. dissipated power:	440W
Max. collector current:	150A
Max collector current (impulse):	300A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO247
Manufacturer:	Donghai
Collector-emitter voltage:	650V
Operating temperature (range):	-45°C ~ 175°C
Gate-emitter voltage:	30V
Mounting:	THT

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