DMG6601LVT-7
Symbol Micros:
TDMG6601lvt
Case : TSOT23-6
Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26
Parameters
| Open channel resistance: | 190mOhm |
| Max. drain current: | 3,8A |
| Max. power loss: | 1,3W |
| Case: | TSOT23-6 |
| Manufacturer: | DIODES |
| Max. drain-source voltage: | 30V |
| Transistor type: | N/P-MOSFET |
Manufacturer:: DIODES/ZETEX
Manufacturer part number: DMG6601LVT-7 RoHS
Case style: TSOT23-6 t/r
Datasheet
In stock:
2480 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,2502 | 0,1385 | 0,0920 | 0,0767 | 0,0715 |
Manufacturer:: DIODES/ZETEX
Manufacturer part number: DMG6601LVT-7
Case style: TSOT23-6
External warehouse:
33000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0715 |
Manufacturer:: DIODES/ZETEX
Manufacturer part number: DMG6601LVT-7
Case style: TSOT23-6
External warehouse:
24000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0715 |
| Open channel resistance: | 190mOhm |
| Max. drain current: | 3,8A |
| Max. power loss: | 1,3W |
| Case: | TSOT23-6 |
| Manufacturer: | DIODES |
| Max. drain-source voltage: | 30V |
| Transistor type: | N/P-MOSFET |
| Max. gate-source Voltage: | 12V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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