DTC123JET1G ONSemiconductor

Symbol Micros: TDTC123jet

126130

TDTC123jet

Contractor Symbol:

Case : SC75-3 (SOT416)

Datasheet

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Prebias NPN 200mW 100mA 50V

Parameters

Power dissipation:	300mW
Current gain factor:	140
Manufacturer:	ON SEMICONDUCTOR
Case:	SC75-3 (SOT416)
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: DTC123JET1G RoHS 8M. Case style: SC75-3 (SOT416) Datasheet

In stock:

500 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,1177	0,0537	0,0292	0,0217	0,0196

Add to comparison tool Add inquiry (RFQ)

Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: DTC123JET1G Case style: SC75-3 (SOT416)  

External warehouse:

15000 pcs.

Quantity of pcs.	9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0196

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: DTC123JET1G Case style: SC75-3 (SOT416)  

External warehouse:

141000 pcs.

Quantity of pcs.	9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0196

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	300mW
Current gain factor:	140
Manufacturer:	ON SEMICONDUCTOR
Case:	SC75-3 (SOT416)
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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