FDA50N50

Symbol Micros: TFDA50N50

91187

TFDA50N50

Contractor Symbol:

Case : TO 3P

Datasheet

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N-MOSFET 48A 500V 625W 0.105Ω

Parameters

Open channel resistance:	105mOhm
Max. drain current:	48A
Max. power loss:	625W
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	105mOhm
Max. drain current:	48A
Max. power loss:	625W
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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