FDA59N30

Symbol Micros: TFDA59N30

91188

TFDA59N30

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Datasheet

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N-MOSFET 59A 300V 500W 0.056Ω

Parameters

Open channel resistance:	56mOhm
Max. drain current:	59A
Max. power loss:	500W
Case:	TO 3P
Manufacturer:	Fairchild
Max. drain-source voltage:	300V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDA59N30 Case style: TO 3P  

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450 pcs.

Quantity of pcs.	450+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,0782

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Packaging:
450

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Delivery within 4-7 business days.
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• Parameters

Open channel resistance:	56mOhm
Max. drain current:	59A
Max. power loss:	500W
Case:	TO 3P
Manufacturer:	Fairchild
Max. drain-source voltage:	300V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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