FDB035AN06A0

Symbol Micros: TFDB035AN06A0

91192

TFDB035AN06A0

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 80A 60V 310W 0.0035Ω

Parameters

Open channel resistance:	3,5mOhm
Max. drain current:	80A
Max. power loss:	310W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDB035AN06A0 Case style: TO263 (D2PAK)  

External warehouse:

800 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,7427

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Packaging:
800

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	3,5mOhm
Max. drain current:	80A
Max. power loss:	310W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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