FDB047N10

Symbol Micros: TFDB047N10

91194

TFDB047N10

Contractor Symbol:

Case : D2PAK

Datasheet

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N-MOSFET 120A 100V 375W 0.0047Ω

Parameters

Open channel resistance:	4,7mOhm
Max. drain current:	120A
Max. power loss:	375W
Case:	D2PAK
Manufacturer:	Fairchild
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDB047N10 Case style: D2PAK  

External warehouse:

1600 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,0011

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Packaging:
800

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	4,7mOhm
Max. drain current:	120A
Max. power loss:	375W
Case:	D2PAK
Manufacturer:	Fairchild
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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