FDB13AN06A0

Symbol Micros: TFDB13AN06A0

91198

TFDB13AN06A0

Contractor Symbol:

Case : D2PAK

Datasheet

Technical drawing Add to favourites

Transistor N-MOSFET; 60V; 10V; 13,5mOhm; 62A; 115W; -55°C ~ 175°C;

Parameters

Open channel resistance:	13,5mOhm
Max. drain current:	62A
Max. power loss:	15W
Case:	DPAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDB13AN06A0 RoHS Case style: D2PAK t/r Datasheet

In stock:

194 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,5723	2,1057	1,8377	1,6702	1,6080

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Packaging:
200 Quantity (multiple: 1)

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Manufacturer:: ON-Semicoductor Manufacturer part number: FDB13AN06A0 Case style: D2PAK  

External warehouse:

22400 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,6080

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Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	13,5mOhm
Max. drain current:	62A
Max. power loss:	15W
Case:	DPAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMA

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