FDB28N30TM

Symbol Micros: TFDB28n30tm
Contractor Symbol:
Case : D2PAK
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Transistor N-Channel MOSFET; 300V; 10V; 129mOhm; 28A; 250W; -55°C~150°C;
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Parameters
Open channel resistance: 129mOhm
Max. drain current: 28A
Max. power loss: 250W
Case: D2PAK
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 300V
Transistor type: MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDB28N30TM RoHS Case style: D2PAK t/r Datasheet
In stock:
8 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 300+
Net price (EUR) 1,7805 1,3202 1,1543 1,0725 1,0468
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Packaging:
100
Open channel resistance: 129mOhm
Max. drain current: 28A
Max. power loss: 250W
Case: D2PAK
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 300V
Transistor type: MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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