FDB3632

Symbol Micros: TFDB3632

153729

TFDB3632

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK

Parameters

Open channel resistance:	22mOhm
Max. drain current:	80A
Max. power loss:	310W
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDB3632 Case style: TO263 (D2PAK)  

External warehouse:

150400 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,5065

Add inquiry (RFQ)

Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FDB3632 Case style: TO263 (D2PAK)  

External warehouse:

74400 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,5065

Add to comparison tool Add inquiry (RFQ)

Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	22mOhm
Max. drain current:	80A
Max. power loss:	310W
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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