FDB52N20TM

Symbol Micros: TFDB52n20tm

153731

TFDB52n20tm

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK

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Parameters

Open channel resistance:	49mOhm
Max. drain current:	52A
Max. power loss:	357W
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDB52N20TM RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

122 pcs.

Quantity of pcs.	1+	5+	30+	200+	400+
Net price (EUR)	1,5162	1,0623	0,8751	0,8096	0,7979

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	49mOhm
Max. drain current:	52A
Max. power loss:	357W
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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