FDC2612

Symbol Micros: TFDC2612

91211

TFDC2612

Contractor Symbol:

Case : TSOT23-6

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.1A 200V 0.8W 0.725Ω

Parameters

Open channel resistance:	725mOhm
Max. drain current:	1,1A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDC2612 Case style: TSOT23-6  

External warehouse:

3000 pcs.

Quantity of pcs.	409+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2818

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	725mOhm
Max. drain current:	1,1A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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