FDC6401N

Symbol Micros: TFDC6401N
Contractor Symbol:
Case : TSOT23-6
2N-MOSFET 3A 20V 0.7W 0.07Ω
Parameters
Open channel resistance: 70mOhm
Max. drain current: 3A
Max. power loss: 700mW
Case: TSOT23-6
Manufacturer: Fairchild
Max. drain-source voltage: 20V
Transistor type: 2xN-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC6401N Case style: TSOT23-6  
External warehouse:
6000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2296
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC6401N Case style: TSOT23-6  
External warehouse:
39000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2421
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC6401N Case style: TSOT23-6  
External warehouse:
204000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2306
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 70mOhm
Max. drain current: 3A
Max. power loss: 700mW
Case: TSOT23-6
Manufacturer: Fairchild
Max. drain-source voltage: 20V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD