FDC6561AN

Symbol Micros: TFDC6561AN
Contractor Symbol:
Case : TSOT23-6
2N-MOSFET 2.5A 30V 0.7W 0.095Ω
Parameters
Open channel resistance: 95mOhm
Max. drain current: 2,5A
Max. power loss: 700mW
Case: TSOT23-6
Manufacturer: Fairchild
Max. drain-source voltage: 30V
Transistor type: 2xN-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC6561AN Case style: TSOT23-6  
External warehouse:
15000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1960
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC6561AN Case style: TSOT23-6  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2006
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC6561AN Case style: TSOT23-6  
External warehouse:
150000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2029
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 95mOhm
Max. drain current: 2,5A
Max. power loss: 700mW
Case: TSOT23-6
Manufacturer: Fairchild
Max. drain-source voltage: 30V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD