FDC658AP

Symbol Micros: TFDC658AP

91241

TFDC658AP

Contractor Symbol:

Case : TSOT23-6

Datasheet

Technical drawing

P-MOSFET 4A 30V 0.8W 0.05Ω

Parameters

Open channel resistance:	75mOhm
Max. drain current:	4A
Max. power loss:	1,6W
Case:	TSOT23-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: FDC658AP RoHS Case style: TSOT23-6 t/r Datasheet

In stock:

4 pcs.

Quantity of pcs.	3+	10+	50+	200+	1100+
Net price (EUR)	0,3688	0,2419	0,1729	0,1513	0,1415

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Packaging:
1100 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	75mOhm
Max. drain current:	4A
Max. power loss:	1,6W
Case:	TSOT23-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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