FDC658AP
Symbol Micros:
TFDC658AP
Case : TSOT23-6
P-MOSFET 4A 30V 0.8W 0.05Ω
Parameters
Open channel resistance: | 75mOhm |
Max. drain current: | 4A |
Max. power loss: | 1,6W |
Case: | TSOT23-6 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 30V |
Transistor type: | P-MOSFET |
Open channel resistance: | 75mOhm |
Max. drain current: | 4A |
Max. power loss: | 1,6W |
Case: | TSOT23-6 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 30V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 25V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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