FDC658AP

Symbol Micros: TFDC658AP
Contractor Symbol:
Case : TSOT23-6
P-MOSFET 4A 30V 0.8W 0.05Ω
Parameters
Open channel resistance: 75mOhm
Max. drain current: 4A
Max. power loss: 1,6W
Case: TSOT23-6
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Fairchild Manufacturer part number: FDC658AP RoHS Case style: TSOT23-6 t/r Datasheet
In stock:
4 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1100+
Net price (EUR) 0,3707 0,2431 0,1738 0,1521 0,1423
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Packaging:
1100
Open channel resistance: 75mOhm
Max. drain current: 4A
Max. power loss: 1,6W
Case: TSOT23-6
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD