FDC855N
Symbol Micros:
TFDC855N
Case : TSOT23-6
N-MOSFET 6.1A 30V 0.8W 0.27Ω
Parameters
| Open channel resistance: | 27mOhm |
| Max. drain current: | 6,1A |
| Max. power loss: | 800mW |
| Case: | TSOT23-6 |
| Manufacturer: | Fairchild |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDC855N
Case style: TSOT23-6
External warehouse:
3000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1219 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDC855N
Case style: TSOT23-6
External warehouse:
9000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1222 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDC855N
Case style: TSOT23-6
External warehouse:
3000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1426 |
| Open channel resistance: | 27mOhm |
| Max. drain current: | 6,1A |
| Max. power loss: | 800mW |
| Case: | TSOT23-6 |
| Manufacturer: | Fairchild |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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