FDD5690 ON Semiconductor

Symbol Micros: TFDD5690

129220

TFDD5690

Contractor Symbol:

Case : TO252

Datasheet

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N-Channel 60V 30A (Tc) 3.2W (Ta), 50W (Tc) Surface Mount TO-252

Parameters

Open channel resistance:	48mOhm
Max. drain current:	30A
Max. power loss:	50W
Case:	TO252
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDD5690 RoHS Case style: TO252 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,1536	0,8804	0,7286	0,6398	0,6072

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	48mOhm
Max. drain current:	30A
Max. power loss:	50W
Case:	TO252
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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