FDD7N25LZTM

Symbol Micros: TFDD7n25lztm

111397

TFDD7n25lztm

Contractor Symbol:

Case : TO252

Datasheet

Technical drawing Add to favourites

N-MOSFET 6.2A 250V 550mOhm

Parameters

Open channel resistance:	570mOhm
Max. drain current:	6,2A
Max. power loss:	56W
Case:	TO252
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	250V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDD7N25LZTM RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

15 pcs.

Quantity of pcs.	1+	5+	20+	100+	270+
Net price (EUR)	1,1326	0,7893	0,6702	0,6118	0,5955

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Packaging:
270 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FDD7N25LZTM Case style: TO252  

External warehouse:

5000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5955

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	570mOhm
Max. drain current:	6,2A
Max. power loss:	56W
Case:	TO252
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	250V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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