FDD8896

Symbol Micros: TFDD8896 VBS
Contractor Symbol:
Case : TO252
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Transistor N-Channel MOSFET; 30V; +/-20V; 2,1Ohm; 12A; 165W; -55°C~175°C; Substitute: FDD8896-VB;
Parameters
Open channel resistance: 2,1Ohm
Max. drain current: 12A
Max. power loss: 165W
Case: TO252
Manufacturer: VBS
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: VBsemi Manufacturer part number: FDD8896 RoHS Case style: TO252t/r Datasheet
In stock:
80 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,8313 0,5213 0,4344 0,3851 0,3616
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Packaging:
100
Open channel resistance: 2,1Ohm
Max. drain current: 12A
Max. power loss: 165W
Case: TO252
Manufacturer: VBS
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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