FDN306P

Symbol Micros: TFDN306p

92739

TFDN306p

Contractor Symbol:

Case : SSOT3

Datasheet

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Transistor P-Channel MOSFET; 12V; 8V; 80mOhm; 2,6A; 500mW; -55°C ~ 150°C;

Parameters

Open channel resistance:	80mOhm
Max. drain current:	2,6A
Max. power loss:	500mW
Case:	SSOT3
Manufacturer:	Fairchild
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN306P RoHS Case style: SSOT3 Datasheet

In stock:

5 pcs.

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3366	0,1870	0,1477	0,1340	0,1297

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Packaging:
500 Quantity (multiple: 1)

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Manufacturer:: ON-Semicoductor Manufacturer part number: FDN306P RoHS 306. Case style: SSOT3 Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	300+	1500+
Net price (EUR)	0,3366	0,2216	0,1592	0,1363	0,1297

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Packaging:
300 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN306P Case style: SSOT3  

External warehouse:

39000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1297

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Fairchild Manufacturer part number: FDN306P Case style: SSOT3  

External warehouse:

87000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1297

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	80mOhm
Max. drain current:	2,6A
Max. power loss:	500mW
Case:	SSOT3
Manufacturer:	Fairchild
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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