FDN306P

Symbol Micros: TFDN306p

92739

TFDN306p

Contractor Symbol:

Case : SSOT3

Datasheet

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Transistor P-Channel MOSFET; 12V; 8V; 80mOhm; 2,6A; 500mW; -55°C ~ 150°C;

Parameters

Open channel resistance:	80mOhm
Max. drain current:	2,6A
Max. power loss:	500mW
Case:	SSOT3
Manufacturer:	Fairchild
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN306P RoHS Case style: SSOT3 Datasheet

In stock:

5 pcs.

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3466	0,1926	0,1521	0,1379	0,1336

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Packaging:
500 Quantity (multiple: 1)

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Manufacturer:: ON-Semicoductor Manufacturer part number: FDN306P RoHS 306. Case style: SSOT3 Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	300+	1500+
Net price (EUR)	0,3466	0,2282	0,1639	0,1403	0,1336

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Packaging:
300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	80mOhm
Max. drain current:	2,6A
Max. power loss:	500mW
Case:	SSOT3
Manufacturer:	Fairchild
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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