FDN306P

Symbol Micros: TFDN306p
Contractor Symbol:
Case : SSOT3
Transistor P-Channel MOSFET; 12V; 8V; 80mOhm; 2,6A; 500mW; -55°C ~ 150°C;
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Parameters
Open channel resistance: 80mOhm
Max. drain current: 2,6A
Max. power loss: 500mW
Case: SSOT3
Manufacturer: Fairchild
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN306P RoHS Case style: SSOT3 Datasheet
In stock:
5 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,3171 0,1757 0,1388 0,1259 0,1219
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Packaging:
500
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN306P RoHS 306. Case style: SSOT3 Datasheet
In stock:
300 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 1500+
Net price (EUR) 0,3171 0,2081 0,1496 0,1280 0,1219
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Packaging:
300
Open channel resistance: 80mOhm
Max. drain current: 2,6A
Max. power loss: 500mW
Case: SSOT3
Manufacturer: Fairchild
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD