FDN306P

Symbol Micros: TFDN306P VBS

366379

TFDN306P VBS

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

Transistor P-Channel MOSFET; 20V; 12V; 8,8Ohm; 18A; 2,5W; -55°C ~ 150°C;

Parameters

Open channel resistance:	8,8Ohm
Max. drain current:	18A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VBSEMI ELEC
Max. drain-source voltage:	-20V
Transistor type:	MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: FDN306P RoHS Case style: SOT23t/r Datasheet

In stock:

150 pcs.

Quantity of pcs.	5+	30+	150+	750+	3000+
Net price (EUR)	0,2499	0,1214	0,0864	0,0750	0,0715

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Packaging:
150 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	8,8Ohm
Max. drain current:	18A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VBSEMI ELEC
Max. drain-source voltage:	-20V
Transistor type:	MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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