FDN336P
Symbol Micros:
TFDN336p
Case : SuperSOT3
P-MOSFET -1.3A -20V 0.5W 0.122Ω
Parameters
Open channel resistance: | 320mOhm |
Max. drain current: | 1,3A |
Max. power loss: | 500mW |
Case: | SuperSOT3 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 20V |
Transistor type: | P-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN336P RoHS
Case style: SuperSOT3
In stock:
200 pcs.
Quantity of pcs. | 3+ | 10+ | 50+ | 200+ | 1000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,3082 | 0,1966 | 0,1380 | 0,1198 | 0,1121 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN336P
Case style: SuperSOT3
External warehouse:
9000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,1292 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN336P
Case style: SuperSOT3
External warehouse:
36000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,1227 |
Open channel resistance: | 320mOhm |
Max. drain current: | 1,3A |
Max. power loss: | 500mW |
Case: | SuperSOT3 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 20V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 8V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols