FDN336P

Symbol Micros: TFDN336p
Contractor Symbol:
Case : SuperSOT3
P-MOSFET -1.3A -20V 0.5W 0.122Ω
Parameters
Open channel resistance: 320mOhm
Max. drain current: 1,3A
Max. power loss: 500mW
Case: SuperSOT3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN336P RoHS Case style: SuperSOT3  
In stock:
200 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,3082 0,1966 0,1380 0,1198 0,1121
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Packaging:
200
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN336P Case style: SuperSOT3  
External warehouse:
9000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1292
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN336P Case style: SuperSOT3  
External warehouse:
36000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1227
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 320mOhm
Max. drain current: 1,3A
Max. power loss: 500mW
Case: SuperSOT3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD