FDN338P SOT23-3 HUASHUO

Symbol Micros: TFDN338p HUA

356879

TFDN338p HUA

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 20V; 12V; 140mOhm; 3A; 1W; -55°C ~ 150°C;

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Parameters

Open channel resistance:	140mOhm
Max. drain current:	3A
Max. power loss:	1W
Case:	SOT23
Manufacturer:	Huashuo Semiconductor
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: HUASHUO Manufacturer part number: FDN338P RoHS Case style: SOT23t/r Datasheet

In stock:

2191 pcs.

Quantity of pcs.	5+	20+	100+	500+	2191+
Net price (EUR)	0,1719	0,0815	0,0456	0,0345	0,0312

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Packaging:
2191 Quantity (multiple: 1)

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Manufacturer:: HUASHUO Manufacturer part number: FDN338P RoHS Case style: SOT23t/r Datasheet

In stock:

809 pcs.

Quantity of pcs.	5+	30+	150+	809+	4045+
Net price (EUR)	0,1719	0,0686	0,0420	0,0336	0,0312

Add to comparison tool Add inquiry (RFQ)

Packaging:
809 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	140mOhm
Max. drain current:	3A
Max. power loss:	1W
Case:	SOT23
Manufacturer:	Huashuo Semiconductor
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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