FDN338P JSMICRO

Symbol Micros: TFDN338p JSM
Contractor Symbol:
Case : SOT23
Transistor P-Channel MOSFET; 20V; 8V; 210mOhm; 1,6A; 350mW; -55°C ~ 150°C; Equivalent: FDN338P Onsemi;
Parameters
Open channel resistance: 210mOhm
Max. drain current: 1,6A
Max. power loss: 350mW
Case: SOT23
Manufacturer: JSMICRO
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: JSMicro Semiconductor Manufacturer part number: FDN338P RoHS Case style: SOT23t/r Datasheet
In stock:
740 pcs.
Quantity of pcs. 5+ 30+ 150+ 740+ 3700+
Net price (EUR) 0,1607 0,0640 0,0392 0,0315 0,0292
Add to comparison tool
Packaging:
740
Manufacturer:: JSMicro Semiconductor Manufacturer part number: FDN338P RoHS Case style: SOT23t/r Datasheet
In stock:
260 pcs.
Quantity of pcs. 5+ 20+ 100+ 260+ 1300+
Net price (EUR) 0,1607 0,0757 0,0420 0,0343 0,0292
Add to comparison tool
Packaging:
260
Open channel resistance: 210mOhm
Max. drain current: 1,6A
Max. power loss: 350mW
Case: SOT23
Manufacturer: JSMICRO
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD