FDN339AN ON SEMICONDUCTOR (FAIRCHILD)

Symbol Micros: TFDN339an

113361

TFDN339an

Contractor Symbol:

Case : SuperSOT3

Datasheet

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N-MOSFET 3A 20V 0.5W 0.035Ω

Parameters

Open channel resistance:	61mOhm
Max. drain current:	3A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN339AN RoHS Case style: SuperSOT3 Datasheet

In stock:

3000 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,4501	0,2479	0,1952	0,1808	0,1733

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	61mOhm
Max. drain current:	3A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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