FDN5630
Symbol Micros:
TFDN5630
Case : SuperSOT3
N-MOSFET 1.7A 60V 0.5W 0.1Ω
Parameters
Open channel resistance: | 180mOhm |
Max. drain current: | 1,7A |
Max. power loss: | 500mW |
Case: | SuperSOT3 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN5630
Case style: SuperSOT3
External warehouse:
90000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0816 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN5630
Case style: SuperSOT3
External warehouse:
36000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0911 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN5630
Case style: SuperSOT3
External warehouse:
258000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0941 |
Open channel resistance: | 180mOhm |
Max. drain current: | 1,7A |
Max. power loss: | 500mW |
Case: | SuperSOT3 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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