FDN5630

Symbol Micros: TFDN5630
Contractor Symbol:
Case : SuperSOT3
N-MOSFET 1.7A 60V 0.5W 0.1Ω
Parameters
Open channel resistance: 180mOhm
Max. drain current: 1,7A
Max. power loss: 500mW
Case: SuperSOT3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN5630 Case style: SuperSOT3  
External warehouse:
90000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0816
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN5630 Case style: SuperSOT3  
External warehouse:
36000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0911
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN5630 Case style: SuperSOT3  
External warehouse:
258000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0941
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 180mOhm
Max. drain current: 1,7A
Max. power loss: 500mW
Case: SuperSOT3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD