FDP3652

Symbol Micros: TFDP3652

169367

TFDP3652

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 61A 100V 150W 0.016Ω

Parameters

Open channel resistance:	43mOhm
Max. drain current:	61A
Max. power loss:	150W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDP3652 Case style: TO220  

External warehouse:

1400 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,8269

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Packaging:
800

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	43mOhm
Max. drain current:	61A
Max. power loss:	150W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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