FDP61N20
Symbol Micros:
TFDP61n20
Case : TO220
Transistor N-Channel MOSFET; 200V; 30V; 41mOhm; 61A; 417W; -55°C ~ 150°C;
Parameters
Open channel resistance: | 41mOhm |
Max. drain current: | 61A |
Max. power loss: | 417W |
Case: | TO220 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDP61N20 RoHS
Case style: TO220
Datasheet
In stock:
50 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
---|---|---|---|---|---|
Net price (EUR) | 2,3445 | 1,9662 | 1,7467 | 1,6113 | 1,5622 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDP61N20
Case style: TO220
External warehouse:
100 pcs.
Quantity of pcs. | 100+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 1,5622 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDP61N20
Case style: TO220
External warehouse:
500 pcs.
Quantity of pcs. | 100+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 1,5622 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDP61N20
Case style: TO220
External warehouse:
3794 pcs.
Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 1,5622 |
Open channel resistance: | 41mOhm |
Max. drain current: | 61A |
Max. power loss: | 417W |
Case: | TO220 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 30V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | THT |
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