FDP8860 Fairchild

Symbol Micros: TFDP8860

105986

TFDP8860

Contractor Symbol:

Case : TO220AB

Datasheet

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N-MOSFET 30V 80A 2.5mΩ 254W

Parameters

Open channel resistance:	3,8mOhm
Max. drain current:	80A
Max. power loss:	254W
Case:	TO220AB
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	3,8mOhm
Max. drain current:	80A
Max. power loss:	254W
Case:	TO220AB
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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