FDT3612

Symbol Micros: TFDT3612

194029

TFDT3612

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Datasheet

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Trans MOSFET N-CH 100V 3.7A 4-Pin(3+Tab) SOT-223

Parameters

Open channel resistance:	245mOhm
Max. drain current:	3,7A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDT3612 Case style: SOT223  

External warehouse:

16000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2474

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Packaging:
4000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	245mOhm
Max. drain current:	3,7A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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